Abstract

Resistive random access memory (ReRAM) has emerged as a promising candidate for next-generation non-volatile memory and neuromorphic computing owing to its simple metal–oxide–metal architecture, low power consumption, and scalability. In this work, we report the hydrothermal synthesis of crystalline V₂O₅ nanospheres and investigate their suitability for memristive switching applications. Phase-pure orthorhombic V₂O₅ nanospheres were synthesized using an ethylene-glycol-assisted hydrothermal method and comprehensively characterized by X-ray diffraction, electron microscopy, and elemental analysis. The nanospheres exhibit high crystallinity, uniform morphology, and homogeneous elemental distribution. Memristive devices fabricated on SiO₂/Si substrates with Au top electrodes demonstrate stable bipolar resistive switching behaviour with well-defined SET and RESET voltages, reliable endurance, and long-term retention. The resistive switching mechanism is attributed to oxygen-vacancy-mediated electrochemical metallization involving reversible formation and rupture of conductive filaments within the V₂O₅ nanospheres. Furthermore, the devices exhibit analog conductance modulation suitable for synaptic functionalities, highlighting their potential for neuromorphic computing applications. These results establish V₂O₅ nanospheres as a viable active material for multifunctional memory and neuromorphic devices.

Keywords

V₂O₅ Nanostructures, Memristor, Reram, Resistive Switching, Transition Metal Oxides, Hydrothermal Synthesis, Non-Volatile Memory, Neuromorphic,

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